stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 description description description description st n1012 is the n -channel enhancement mode power field effect transistor s are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance . these devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching , low in-line power loss , and resistance to transients are needed . pin pin pin pin configuration configuration configuration configuration sot- sot- sot- sot- 523 523 523 523 / / / / sc- sc- sc- sc- 89 89 89 89 part part part part marking marking marking marking feature feature feature feature ? 20 v/ 0 . 65 a, r ds(on) = 380 ohm@v gs = 4.5 v ? 20 v/ 0. 5 5 a, r ds(on) = 450 ohm@v gs = 2.5 v ? 20v/0.45a, r ds(on) =800ohm@ v gs = 1.8 v ? super high density cell design for extremely low r ds(on) ? exceptional low on-resistance and maximum dc current capability ? sot- 523 / sc 89 package design
stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage v dss 20 v gate-source voltage v gss +/- 12 v continuous drain current (t j =150 ) t a =25 i d 0.65 a t a = 8 0 0. 45 pulsed drain current i dm 1.0 a continuous source current (diode conduction) i s 0. 3 a power dissipation t a =25 p d 0. 27 w t a =70 0.16 operation junction temperature t j -55/ 150 storage temperature range t stg -55/150
stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit off off off off characteristics characteristics characteristics characteristics drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0. 35 1. 0 v gate leakage current i gss v ds =0v,v gs =+/- 12 v 100 na zero gate voltage drain current i dss v ds =2 0 v,v gs =0v 1 ua v ds =2 0 v,v gs =0v t j = 5 5 5 on-state drain current i d(on) v ds Q 4.5 v,v gs = 5 v 0.7 a drain-source on-resistance r ds(on) v gs = 4.5 v,i d = 0. 65 a 260 380 m v gs = 2.5 v,i d = 0. 55 a 320 450 v gs = 1 .8 v,i d = 0. 55 a 420 800 forward tran s conductance g fs v ds = 10 v,i d = 0.4 a 1.0 s diode forward voltage v sd i s = 0. 1 5 a,v gs =0v 0.8 1.2 v d d d d ynamic ynamic ynamic ynamic total gate charge q g v ds = 10 v,v gs = 4.5 v, v d s = 0. 6 a 1 .2 1.5 nc gate-source charge q gs 0.2 gate-drain charge q gd 0.3 turn-on time t d(on) v dd =1 0 v, rl=1 0 , i d = 0.5 a, v gen = 4.5 v , rg=6 5 10 ns t r 8 15 turn-off time t d(off) 10 18 t f 1.2 2.8
stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
stn stn stn stn 1012 1012 1012 1012 dual n channel enhancement mode mosfet 0 . 65 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com stn 1012 200 9 . v1 sot sot sot sot 523 523 523 523 ( ( ( ( sc-89 sc-89 sc-89 sc-89 ) ) ) ) package package package package outline outline outline outline
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